BUZ73A H3046

BUZ 73A H SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 73 A 200 V 5.5 A 0.6 Ω PG-TO-220-3 yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 37 ˚C Pulsed drain current Values Unit A 5.5 IDpuls TC = 25 ˚C 22 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax E AR 6.5 Avalanche energy, single pulse E AS mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 120 Gate source voltage VGS Power dissipation Ptot TC = 25 ˚C ± 20 W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA 75 DIN humidity category, DIN 40 040 ˚C K/W E 55 / 150 / 56 IEC climatic category, DIN IEC 68-1 Rev. 2.4 V Page 1 2009-11-10 BUZ 73A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - V GS(th) V GS=VDS, ID = 1 mA Zero gate voltage drain current V 2.1 3 4 IDSS µA VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 4.5 A Rev. 2.4 nA - Page 2 0.5 0.6 2009-11-10 BUZ 73A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A Input capacitance 3 pF - 400 530 - 85 130 - 45 70 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 4.2 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S td(on) ns V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time - 10 15 - 40 60 - 55 75 - 30 40 tr V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rev. 2.4 Page 3 2009-11-10 BUZ 73A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 ˚C Inverse diode direct current,pulsed - - 22 V 1.3 1.7 trr ns - 200 - Qrr V R = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.4 5.5 - V R = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD VGS = 0 V, IF = 14 A Reverse recovery time ISM TC = 25 ˚C Inverse diode forward voltage A µC - Page 4 0.6 - 2009-11-10 BUZ 73A H Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V Power dissipation Ptot = ƒ(TC) 6.0 45 A W 5.0 Ptot ID 35 4.5 4.0 30 3.5 25 3.0 20 2.5 15 2.0 1.5 10 1.0 5 0.5 0 0 0.0 20 40 60 80 100 120 ˚C 0 160 20 40 60 80 100 120 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C ˚C 160 TC Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 K/W A t = 36.0µs p ID ZthJC /I D 100 µs R DS (o n) =V DS 10 1 10 0 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Rev. 2.4 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 0 tp Page 5 2009-11-10 BUZ 73A H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 13 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.8 Ptot = 40W kj i h g ID VGS [V] 10 e a 4.0 b 4.5 c 5.0 d 5.5 8 e 6.0 7 d f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 9 6 5 c 4 RDS (on) l 1.4 1.0 0.8 e f g h i j 0.6 20.0 k 0.4 b 2 0 0 VGS [V] = 0.2 a 1 d 1.2 k 10.0 3 c Ω f 11 b a l A a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 2 4 6 8 A VDS Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 13 6.0 A S 11 ID 11 ID 5.0 gfs 10 9 4.5 4.0 8 3.5 7 3.0 6 2.5 5 2.0 4 1.5 3 2 1.0 1 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V 10 0 VGS Rev. 2.4 2 4 6 8 A 12 ID Page 6 2009-11-10 BUZ 73A H Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 4.5 A, VGS = 10 V 4.6 1.9 Ω V 98% 4.0 1.6 VGS(th) RDS (on) 3.6 1.4 typ 3.2 1.2 2.8 1.0 2.4 98% 0.8 2% 2.0 typ 1.6 0.6 1.2 0.4 0.8 0.2 0.4 0.0 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 Typ. capacitances ˚C 160 Tj Tj Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 10 2 nF A IF C 10 0 10 1 Ciss 10 -1 10 0 Tj = 25 ˚C typ Coss Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V 40 10 -1 0.0 VDS Rev. 2.4 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Page 7 2009-11-10 BUZ 73A H Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 130 16 mJ V 110 EAS VGS 100 12 90 10 80 0,8 VDS max 0,2 VDS max 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 Tj 0 4 8 12 16 20 24 28 32 nC 38 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.4 Page 8 2009-11-10 BUZ 73A H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 73A H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 10 2009-11-10